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Part Number | SIZ200DT-T1-GE3 |
Datasheet | SIZ200DT-T1-GE3 datasheet |
Description | MOSFET N-CH DUAL 30V |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V, 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 15V, 1600pF @ 15V |
Power - Max | 4.3W (Ta), 33W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Supplier Device Package | 8-PowerPair® (3.3x3.3) |