
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / PQMD3Z

| Part Number | PQMD3Z |
| Datasheet | PQMD3Z datasheet |
| Description | TRANS NPN/PNP RET 6DFN |
| Manufacturer | Nexperia USA Inc. |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| Frequency - Transition | 230MHz, 180MHz |
| Power - Max | 230mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad |
| Supplier Device Package | DFN1010B-6 |