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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPC6012(TE85L,F,M)
Part Number | TPC6012(TE85L,F,M) |
Description | MOSFET N-CH 20V 6A VS6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSIV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | VS-6 (2.9x2.8) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |