Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
FDD2612 |
Datasheet |
FDD2612 datasheet |
Description |
MOSFET N-CH 200V 4.9A D-PAK |
Manufacturer |
ON Semiconductor |
Series |
PowerTrench® |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200V |
Current - Continuous Drain (Id) @ 25°C |
4.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
720 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id |
4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
11nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
234pF @ 100V |
FET Feature |
- |
Power Dissipation (Max) |
42W (Ta) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252 |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Latest Products for Transistors - FETs, MOSFETs - Single
ON Semiconductor
MOSFET N-CH 60V 60A SMP-FD
ON Semiconductor
MOSFET N-CH 100V 40A SMP-FD
Infineon Technologies
MOSFET N-CH 55V 16A DPAK
Infineon Technologies
MOSFET N-CH 40V 42A DPAK
Infineon Technologies
MOSFET N-CH 55V 28A DPAK
Infineon Technologies
MOSFET N-CH 30V 35A DPAK