Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN2901(T5L,F,T)

Product Introduction

RN2901(T5L,F,T)

Part Number
RN2901(T5L,F,T)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS 2PNP PREBIAS 0.2W US6
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
4182pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number RN2901(T5L,F,T)
Description TRANS 2PNP PREBIAS 0.2W US6
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Obsolete
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 200MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6

Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RN1906FE(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

RN1910FE(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

RN1961FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

RN1962FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

RN1963FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

RN1964FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6