Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SSM6L35FE,LM
Part Number | SSM6L35FE,LM |
Datasheet | SSM6L35FE,LM datasheet |
Description | MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 180mA, 100mA |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
Power - Max | 150mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 (1.6x1.6) |