Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TSM4NB65CI C0G
Part Number | TSM4NB65CI C0G |
Datasheet | TSM4NB65CI C0G datasheet |
Description | MOSFET N-CHANNEL 650V 4A ITO220 |
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.37 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13.46nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 549pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 70W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ITO-220AB |
Package / Case | TO-220-3 Full Pack, Isolated Tab |