Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQD40030E_GE3
Part Number | SQD40030E_GE3 |
Datasheet | SQD40030E_GE3 datasheet |
Description | MOSFET N-CHANNEL 40V TO252AA |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |