Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / IXYX200N65B3
Part Number | IXYX200N65B3 |
Datasheet | IXYX200N65B3 datasheet |
Description | IGBT |
Manufacturer | IXYS |
Series | XPT™, GenX3™ |
Part Status | Active |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 410A |
Current - Collector Pulsed (Icm) | 1100A |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 100A |
Power - Max | 1560W |
Switching Energy | 5mJ (on), 4mJ (off) |
Input Type | Standard |
Gate Charge | 340nC |
Td (on/off) @ 25°C | 60ns/370ns |
Test Condition | 400V, 100A, 0 Ohm, 15V |
Reverse Recovery Time (trr) | 108ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | PLUS247™-3 |