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Part Number | IPG20N06S4L11ATMA1 |
Datasheet | IPG20N06S4L11ATMA1 datasheet |
Description | MOSFET 2N-CH 8TDSON |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS™ |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 11.2 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 28µA |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4020pF @ 25V |
Power - Max | 65W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8-4 |