Product Introduction
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Product Specifications
Part Number |
IRF9910 |
Datasheet |
IRF9910 datasheet |
Description |
MOSFET 2N-CH 20V 10A 8-SOIC |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
2 N-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
10A, 12A |
Rds On (Max) @ Id, Vgs |
13.4 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
900pF @ 10V |
Power - Max |
2W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SO |
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