Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2104ENGRT

Product Introduction

EPC2104ENGRT

Part Number
EPC2104ENGRT
Manufacturer/Brand
EPC
Description
GANFET 2NCH 100V 23A DIE
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
eGaN®
Quantity
683pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number EPC2104ENGRT
Description GANFET 2NCH 100V 23A DIE
Manufacturer EPC
Series eGaN®
Part Status Discontinued at Digi-Key
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 23A
Rds On (Max) @ Id, Vgs 6.3 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Latest Products for Transistors - FETs, MOSFETs - Arrays

IPG20N06S3L-35

Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8

IPG20N06S415ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N06S415ATMA2

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N06S4L11ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N06S4L14ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N06S4L14ATMA2

Infineon Technologies

MOSFET 2N-CH 8TDSON