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Product Introduction
IPDD60R102G7XTMA1
- Part Number
- IPDD60R102G7XTMA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET NCH 650V 66A PG-HDSOP-10
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- CoolMOS™ G7
- Quantity
- 1647pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPDD60R102G7XTMA1 |
| Description | MOSFET NCH 650V 66A PG-HDSOP-10 |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ G7 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 102 mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 390µA |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1320pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-10-1 |
| Package / Case | 10-PowerSOP Module |
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