Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI4967DY-T1-GE3
Part Number | SI4967DY-T1-GE3 |
Datasheet | SI4967DY-T1-GE3 datasheet |
Description | MOSFET 2P-CH 12V 8SOIC |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 7.5A, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |