Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / FDMS3660S
Part Number | FDMS3660S |
Datasheet | FDMS3660S datasheet |
Description | MOSFET 2N-CH 30V 13A/30A 8-PQFN |
Manufacturer | ON Semiconductor |
Series | PowerTrench® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) Asymmetrical |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 13A, 30A |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1765pF @ 15V |
Power - Max | 1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | Power56 |