Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIA445EDJ-T1-GE3

Product Introduction

SIA445EDJ-T1-GE3

Part Number
SIA445EDJ-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET P-CH 20V 12A SC-70
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
8757pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number SIA445EDJ-T1-GE3
Description MOSFET P-CH 20V 12A SC-70
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 16.5 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2130pF @ 10V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6

Latest Products for Transistors - FETs, MOSFETs - Single

TPC8018-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 18A SOP8 2-6J1B

TPC8021-H(TE12LQ,M

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A SOP8 2-6J1B

TPC8022-H(TE12LQ,M

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 7.5A SOP8 2-6J1B

TPC8026(TE12L,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 13A 8-SOIC

TPC8031-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A SOP8 2-6J1B

TPC8032-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 15A SOP8 2-6J1B

Related Products