Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD053N06NATMA1
Part Number | IPD053N06NATMA1 |
Datasheet | IPD053N06NATMA1 datasheet |
Description | MOSFET N-CH 60V 18A TO252-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 5.3 mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 36µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 83W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |