Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / BSZ215CHXTMA1
Part Number | BSZ215CHXTMA1 |
Datasheet | BSZ215CHXTMA1 datasheet |
Description | MOSFET N/P-CH 20V 8TDSON |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS™ |
Part Status | Active |
FET Type | N and P-Channel Complementary |
FET Feature | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.1A, 3.2A |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 5.1A, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 110µA |
Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 419pF @ 10V |
Power - Max | 2.5W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | PG-TSDSON-8 |