Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2101ENGRT
Product Introduction
EPC2101ENGRT
- Part Number
- EPC2101ENGRT
- Manufacturer/Brand
- EPC
- Description
- GAN TRANS ASYMMETRICAL HALF BRID
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHs Status
- Lead free / RoHS Compliant
- Series
- eGaN®
- Quantity
- 7184pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | EPC2101ENGRT |
| Datasheet | EPC2101ENGRT datasheet |
| Description | GAN TRANS ASYMMETRICAL HALF BRID |
| Manufacturer | EPC |
| Series | eGaN® |
| Part Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
| Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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