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Product Introduction

SI2301BDS-T1-GE3

Part Number
SI2301BDS-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET P-CH 20V 2.2A SOT23-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
3155pcs Stock Available.

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Product Specifications

Part Number SI2301BDS-T1-GE3
Datasheet SI2301BDS-T1-GE3 datasheet
Description MOSFET P-CH 20V 2.2A SOT23-3
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 100 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 375pF @ 6V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3

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