Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFSL3307ZPBF
Part Number | IRFSL3307ZPBF |
Datasheet | IRFSL3307ZPBF datasheet |
Description | MOSFET N-CH 75V 120A TO-262 |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4750pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 230W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |