Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIZ900DT-T1-GE3
Part Number | SIZ900DT-T1-GE3 |
Datasheet | SIZ900DT-T1-GE3 datasheet |
Description | MOSFET 2N-CH 30V 24A POWERPAIR |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 24A, 28A |
Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 19.4A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1830pF @ 15V |
Power - Max | 48W, 100W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-PowerPair™ |
Supplier Device Package | 6-PowerPair™ |