Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRF6616TRPBF
Part Number | IRF6616TRPBF |
Datasheet | IRF6616TRPBF datasheet |
Description | MOSFET N-CH 40V 19A DIRECTFET |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 106A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3765pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ MX |
Package / Case | DirectFET™ Isometric MX |