Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2100

Product Introduction

EPC2100

Part Number
EPC2100
Manufacturer/Brand
EPC
Description
GAN TRANS ASYMMETRICAL HALF BRID
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
eGaN®
Quantity
7174pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number EPC2100
Datasheet EPC2100 datasheet
Description GAN TRANS ASYMMETRICAL HALF BRID
Manufacturer EPC
Series eGaN®
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Latest Products for Transistors - FETs, MOSFETs - Arrays

IPG20N10S4L22ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N10S4L35ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FF23MR12W1M1B11BOMA1

Infineon Technologies

MOSFET 2 N-CH 1200V 50A MODULE

FF11MR12W1M1B11BOMA1

Infineon Technologies

MOSFET 2 N-CH 1200V 100A MODULE

BSC150N03LDGATMA1

Infineon Technologies

MOSFET 2N-CH 30V 8A 8TDSON

BSC072N03LDGATMA1

Infineon Technologies

MOSFET 2N-CH 30V 11.5A 8TDSON