Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
EPC2100 |
Datasheet |
EPC2100 datasheet |
Description |
GAN TRANS ASYMMETRICAL HALF BRID |
Manufacturer |
EPC |
Series |
eGaN® |
Part Status |
Active |
FET Type |
2 N-Channel (Half Bridge) |
FET Feature |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
10A (Ta), 40A (Ta) |
Rds On (Max) @ Id, Vgs |
8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 4mA, 2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 15V, 19nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds |
475pF @ 15V, 1960pF @ 15V |
Power - Max |
- |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Supplier Device Package |
Die |
Latest Products for Transistors - FETs, MOSFETs - Arrays
Infineon Technologies
MOSFET 2N-CH 8TDSON
Infineon Technologies
MOSFET 2N-CH 8TDSON
Infineon Technologies
MOSFET 2 N-CH 1200V 50A MODULE
Infineon Technologies
MOSFET 2 N-CH 1200V 100A MODULE
Infineon Technologies
MOSFET 2N-CH 30V 8A 8TDSON
Infineon Technologies
MOSFET 2N-CH 30V 11.5A 8TDSON