Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / DMN2029USD-13
Part Number | DMN2029USD-13 |
Datasheet | DMN2029USD-13 datasheet |
Description | MOSFET 2N-CH 20V 5.8A 8SO |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.8A |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18.6nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 1171pF @ 10V |
Power - Max | 1.2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |