Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / IRL6372TRPBF
Part Number | IRL6372TRPBF |
Datasheet | IRL6372TRPBF datasheet |
Description | MOSFET 2N-CH 30V 8.1A 8SOIC |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.1A |
Rds On (Max) @ Id, Vgs | 17.9 mOhm @ 8.1A, 4.5V |
Vgs(th) (Max) @ Id | 1.1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 25V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |