Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK31V60W,LVQ
Part Number | TK31V60W,LVQ |
Datasheet | TK31V60W,LVQ datasheet |
Description | MOSFET N CH 600V 30.8A 5DFN |
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 98 mOhm @ 15.4A, 10V |
Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
FET Feature | Super Junction |
Power Dissipation (Max) | 240W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-DFN-EP (8x8) |
Package / Case | 4-VSFN Exposed Pad |