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Product Introduction
EPC2110ENGRT
- Part Number
- EPC2110ENGRT
- Manufacturer/Brand
- EPC
- Description
- GAN TRANS 2N-CH 120V BUMPED DIE
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHs Status
- Lead free / RoHS Compliant
- Series
- eGaN®
- Quantity
- 10116pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | EPC2110ENGRT |
| Description | GAN TRANS 2N-CH 120V BUMPED DIE |
| Manufacturer | EPC |
| Series | eGaN® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Common Source |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
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