Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFD9014PBF
Part Number | IRFD9014PBF |
Datasheet | IRFD9014PBF datasheet |
Description | MOSFET P-CH 60V 1.1A 4-DIP |
Manufacturer | Vishay Siliconix |
Series | - |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 660mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |