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Part Number | SSM6N36FE,LM |
Datasheet | SSM6N36FE,LM datasheet |
Description | MOSFET 2N-CH 20V 0.5A ES6 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 500mA |
Rds On (Max) @ Id, Vgs | 630 mOhm @ 200mA, 5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 1.23nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 10V |
Power - Max | 150mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 (1.6x1.6) |