Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / FDD3510H

Product Introduction

FDD3510H

Part Number
FDD3510H
Manufacturer/Brand
ON Semiconductor
Description
MOSFET N/P-CH 80V 4.3A/2.8A DPAK
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
PowerTrench®
Quantity
7pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number FDD3510H
Datasheet FDD3510H datasheet
Description MOSFET N/P-CH 80V 4.3A/2.8A DPAK
Manufacturer ON Semiconductor
Series PowerTrench®
Part Status Active
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 4.3A, 2.8A
Rds On (Max) @ Id, Vgs 80 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 40V
Power - Max 1.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package TO-252-4L

Latest Products for Transistors - FETs, MOSFETs - Arrays

IPG20N06S4L26AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N06S2L65AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG16N10S461AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG16N10S4L61AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N04S408AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N04S412AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON