Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
FDS3601 |
Datasheet |
FDS3601 datasheet |
Description |
MOSFET 2N-CH 100V 1.3A 8SOIC |
Manufacturer |
ON Semiconductor |
Series |
PowerTrench® |
Part Status |
Obsolete |
FET Type |
2 N-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
1.3A |
Rds On (Max) @ Id, Vgs |
480 mOhm @ 1.3A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
153pF @ 50V |
Power - Max |
900mW |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SOIC |
Latest Products for Transistors - FETs, MOSFETs - Arrays
ON Semiconductor
MOSFET N/P-CH 20V MICROFET 2X2
ON Semiconductor
MOSFET 2P-CH 20V 3.7A MICROFET
ON Semiconductor
MOSFET 2N-CH 20V 3.7A 6-MICROFET
ON Semiconductor
MOSFET 2P-CH 20V 3.1A MICROFET
ON Semiconductor
MOSFET 2P-CH 30V 2.9A MICROFET6
ON Semiconductor
MOSFET 2N-CH 30V 2.9A 6-MICROFET