Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / BSG0811NDATMA1

Product Introduction

BSG0811NDATMA1

Part Number
BSG0811NDATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET 2N-CH 25V 19A/41A 8TISON
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
9624pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number BSG0811NDATMA1
Description MOSFET 2N-CH 25V 19A/41A 8TISON
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 19A, 41A
Rds On (Max) @ Id, Vgs 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 12V
Power - Max 2.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TISON-8

Latest Products for Transistors - FETs, MOSFETs - Arrays

IRF7314PBF

Infineon Technologies

MOSFET 2P-CH 20V 5.3A 8-SOIC

IRF7314QTRPBF

Infineon Technologies

MOSFET 2P-CH 20V 5.2A 8SOIC

IRF7314TRPBF

Infineon Technologies

MOSFET 2P-CH 20V 5.3A 8-SOIC

IRF7316GTRPBF

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC

IRF7316PBF

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8-SOIC

IRF7316QTRPBF

Infineon Technologies

MOSFET 2P-CH 30V 4.9A 8SOIC