Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SPB18P06PGATMA1
Product Introduction
SPB18P06PGATMA1
- Part Number
- SPB18P06PGATMA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET P-CH 60V 18.7A TO-263
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- SIPMOS®
- Quantity
- 8991pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SPB18P06PGATMA1 |
| Datasheet | SPB18P06PGATMA1 datasheet |
| Description | MOSFET P-CH 60V 18.7A TO-263 |
| Manufacturer | Infineon Technologies |
| Series | SIPMOS® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 18.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 81.1W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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