Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / NTJD5121NT1G
Part Number | NTJD5121NT1G |
Datasheet | NTJD5121NT1G datasheet |
Description | MOSFET 2N-CH 60V 0.295A SOT363 |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 295mA |
Rds On (Max) @ Id, Vgs | 1.6 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 26pF @ 20V |
Power - Max | 250mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |