Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI5922DU-T1-GE3
Part Number | SI5922DU-T1-GE3 |
Datasheet | SI5922DU-T1-GE3 datasheet |
Description | MOSFET 2 N-CH 30V 6A POWERPAK |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Rds On (Max) @ Id, Vgs | 19.2 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 765pF @ 15V |
Power - Max | 10.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® ChipFET™ Dual |
Supplier Device Package | PowerPAK® ChipFet Dual |