Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2102ENGRT
Part Number | EPC2102ENGRT |
Datasheet | EPC2102ENGRT datasheet |
Description | GANFET 2 N-CHANNEL 60V 23A DIE |
Manufacturer | EPC |
Series | eGaN® |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tj) |
Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 7mA |
Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 30V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |