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| Part Number | ALD212900APAL |
| Datasheet | ALD212900APAL datasheet |
| Description | MOSFET 2N-CH 10.6V 0.08A 8DIP |
| Manufacturer | Advanced Linear Devices Inc. |
| Series | EPAD®, Zero Threshold™ |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Matched Pair |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 10.6V |
| Current - Continuous Drain (Id) @ 25°C | 80mA |
| Rds On (Max) @ Id, Vgs | 14 Ohm |
| Vgs(th) (Max) @ Id | 10mV @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 5V |
| Power - Max | 500mW |
| Operating Temperature | 0°C ~ 70°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | 8-DIP (0.300", 7.62mm) |
| Supplier Device Package | 8-PDIP |