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Product Introduction

TK10J80E,S1E

Part Number
TK10J80E,S1E
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 800V TO-3PN
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
π-MOSVIII
Quantity
6774pcs Stock Available.

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Product Specifications

Part Number TK10J80E,S1E
Datasheet TK10J80E,S1E datasheet
Description MOSFET N-CH 800V TO-3PN
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVIII
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3

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