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Part Number | EPC2111ENGRT |
Description | GAN TRANS ASYMMETRICAL HALF BRID |
Manufacturer | EPC |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 5V, 5.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 15V, 590pF @ 15V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |