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Part Number | SI7252DP-T1-GE3 |
Datasheet | SI7252DP-T1-GE3 datasheet |
Description | MOSFET 2N-CH 100V 36.7A PPAK 8SO |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 36.7A |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1170pF @ 50V |
Power - Max | 46W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual |