Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMB51T2R

Product Introduction

EMB51T2R

Part Number
EMB51T2R
Manufacturer/Brand
Rohm Semiconductor
Description
TRANS 2PNP PREBIAS 0.15W EMT6
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
10pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number EMB51T2R
Description TRANS 2PNP PREBIAS 0.15W EMT6
Manufacturer Rohm Semiconductor
Series -
Part Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 30mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6

Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RN4901,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

RN4905,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

RN4907,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

RN4983,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

RN4984,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

RN4987,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6