Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI7956DP-T1-E3
Part Number | SI7956DP-T1-E3 |
Datasheet | SI7956DP-T1-E3 datasheet |
Description | MOSFET 2N-CH 150V 2.6A PPAK SO-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 2.6A |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual |