Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / FDMS3660S-F121

Product Introduction

FDMS3660S-F121

Part Number
FDMS3660S-F121
Manufacturer/Brand
ON Semiconductor
Description
MOSFET 2N-CH 30V 13A/30A 8-PQFN
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
PowerTrench®
Quantity
9352pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number FDMS3660S-F121
Description MOSFET 2N-CH 30V 13A/30A 8-PQFN
Manufacturer ON Semiconductor
Series PowerTrench®
Part Status Obsolete
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A, 30A
Rds On (Max) @ Id, Vgs 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 15V
Power - Max 1W
Operating Temperature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package Power56

Latest Products for Transistors - FETs, MOSFETs - Arrays

APTC60HM83FT2G

Microsemi Corporation

MOSFET 2N-CH 600V 36A MODULE

APTC60HM70RT3G

Microsemi Corporation

MOSFET 4N-CH 600V 39A SP3F

APTC60HM35T3G

Microsemi Corporation

MOSFET 4N-CH 600V 72A SP3

APTC60DDAM35T3G

Microsemi Corporation

MOSFET 2N-CH 600V 72A SP3

APTC60BBM24T3G

Microsemi Corporation

MOSFET 2N-CH 600V 95A SP3F

APTC60AM45B1G

Microsemi Corporation

MOSFET 3N-CH 600V 49A SP1