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Part Number | SSM3J15CT(TPL3) |
Datasheet | SSM3J15CT(TPL3) datasheet |
Description | MOSFET P-CH 30V 0.1A CST3 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | π-MOSVI |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
Rds On (Max) @ Id, Vgs | 12 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 9.1pF @ 3V |
FET Feature | - |
Power Dissipation (Max) | 100mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | CST3 |
Package / Case | SC-101, SOT-883 |