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| Part Number | TSM6502CR RLG |
| Datasheet | TSM6502CR RLG datasheet |
| Description | MOSFET N/P-CH 60V 24A/18A 8PDFN |
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc), 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.3nC @ 4.5V, 9.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1159pF @ 30V, 930pF @ 30V |
| Power - Max | 40W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-PDFN (5x6) |