Product Introduction
Images are for reference only
See Product Specifications
Product Specifications
Part Number |
IRF8915 |
Datasheet |
IRF8915 datasheet |
Description |
MOSFET 2N-CH 20V 8.9A 8-SOIC |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
2 N-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
8.9A |
Rds On (Max) @ Id, Vgs |
18.3 mOhm @ 8.9A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
7.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
540pF @ 10V |
Power - Max |
2W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SO |
Latest Products for Transistors - FETs, MOSFETs - Arrays
Infineon Technologies
MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
Infineon Technologies
MOSFET N/P-CH 30V 5.8A 8SOIC
Infineon Technologies
MOSFET N/P-CH 30V 5.8A 8SOIC
Infineon Technologies
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Infineon Technologies
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Infineon Technologies
MOSFET 2N-CH 55V 5A 8DSO