Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI7997DP-T1-GE3
Part Number | SI7997DP-T1-GE3 |
Datasheet | SI7997DP-T1-GE3 datasheet |
Description | MOSFET 2P-CH 30V 60A PPAK SO-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 P-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 60A |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6200pF @ 15V |
Power - Max | 46W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual |