Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK8S06K3L(T6L1,NQ)

Product Introduction

TK8S06K3L(T6L1,NQ)

Part Number
TK8S06K3L(T6L1,NQ)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 60V 8A DPAK-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
U-MOSIV
Quantity
9825pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number TK8S06K3L(T6L1,NQ)
Datasheet TK8S06K3L(T6L1,NQ) datasheet
Description MOSFET N-CH 60V 8A DPAK-3
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSIV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 54 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Latest Products for Transistors - FETs, MOSFETs - Single

IRLR9343TRLPBF

Infineon Technologies

MOSFET P-CH 55V 20A DPAK

IXCY01N90E

IXYS

MOSFET N-CH 900V 0.25A TO-252

IXTU5N50P

IXYS

MOSFET N-CH 500V 4.8A TO-252

IXTY01N80

IXYS

MOSFET N-CH 800V 0.1A TO-252AA

IXTY06N120P

IXYS

MOSFET N-CH 1200V 90A TO-252

IXTY12N06T

IXYS

MOSFET N-CH 60V 12A TO-252

Related Products