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Part Number | CSD85312Q3E |
Description | MOSFET 2N-CH 20V 39A 8VSON |
Manufacturer | Texas Instruments |
Series | NexFET™ |
Part Status | Active |
FET Type | 2 N-Channel (Dual) Common Source |
FET Feature | Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 39A |
Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 10A, 8V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2390pF @ 10V |
Power - Max | 2.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | 8-VSON (3.3x3.3) |